Evaluating the Electrical Switching and RF Metrics of Ultrawide Bandgap Devices

Abstract

Ultrawide Bandgap (UWBG) semiconductors such as Gallium Oxide (Ga2O3), Aluminum Gallium Nitride (AlGaN), and Diamond are promising large-power and large-frequency electronics due to their top-notch material properties including high breakdown fields, thermal conductivity, and wide bandgap energies. This study evaluates the critical performance parameters of ultra-wide bandgap (UWBG) transistors, with a specific emphasis on their electrical switching dynamics and radio-frequency (RF) characteristics. The transfer characteristics (Id–Vgs), cutoff frequency (fT), and on/off current ratio of UWBG devices are systematically analyzed through a combination of simulation and experimental validation, underscoring their promise for next-generation power and RF applications