Characterization of N-Polar GaN Based HEMT Heterostructures for Mixed Signal Applications

J. Gajapathi, G. Elumalai, M. M. Jaiganesh


GaN-based transistors are attractive for the nextgeneration
RF power and mixed signal electronics due to their high
breakdown field and high carrier saturation velocity. III-N high
electron mobility transistors (HEMTs) fabricated on the Nface
GaN are well-suited to address the problems of poor electron
confinement and high ohmic contact resistance in the highly scaled
transistors. At 4 GHz, N-polar metal-insulatorsemiconductor
(MIS)-HEMTs with a gate length of 0.7 m exhibited a highest
output power density (Pout) of 8.1 W/mm and highest power-added
efficiency(PAE) of 71 %, while a Pout of 4.2 W/mm and a PAE of
49% were achieved at 10 GHz. A high speed N-polar MIS-HEMT
fabricated with a gate-first selfaligned
InGaN-based ohmic contact
regrowth technology was characterized, demonstrating an ultra-low
contact resistance of 23n- m and a state-of-the-art fr •LG product of
16.8 GHz- m with a gate length of 130 nm.

Full Text:



S. Rajan, A. Chini, M. H. Wong, J. S. Speck, and U. K. Mishra, "N-polar

GaN/AIGaN/GaN high electron mobility transistors," J. Appl. Phys., vol.

, no. 4, p. 044501, August 2007.

A. Chini, Y. Fu, S. Rajan, J. S. Speck, and U. K. Mishra, "An experimental

method to identify bulk and surface traps in GaN HEMTs," in Proc. 32"d

Int. Symp. Compound Semicond., Rust,Germany, September 18-22, 2005.

M. H. Wong, Y. Pei, R. Chu, S. Rajan, B. L. Swenson, D. F. Brown, S.

Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "N-face metalinsulator-

semiconductor high electronmobility transistors with AIN backbarrier,"

IEEE Electron Device Lett., vol. 29, no. 10, pp. 1101-1104,

October 2008.

M. H. Wong, Y. Pei, J. S. Speck, and U. K. Mishra, "High power N-face

GaN high electron mobility transistors grown by molecular beam epitaxy

with optimization of AIN nucleation," Appl. Phys. Lett., vol. 94, no. 18, p.

, May 2009.

M. H. Wong, Y. Pei, D. F. Brown, S. Keller, J. S. Speck, and U. K.

Mishra, "High-performance N-face GaN microwave MISHEMTs with

>70% power-added efficiency," IEEE Electron Device Lett., vol. 30, no. 8,

pp. 802-804, August 2009

S. Dasgupta, Nidhi, D. F. Brown, F. Wu, S. Keller, 1. S.Speck, and U. K.

Mishra, "Ultra-low non-alloyed ohmic contact resistance to self-aligned Npolar

GaN HEMT by InGaN regrowth by PAMBE," Appl. Phys. Lett.,

accepted (2010).

M. 1. W. Rodwell, U. Singisetti, M. Wistey, G. Burek, A. Gossard, C.

Palm strom, E. Arkun, P. Simmonds, S. Stemmer, R. Engel-Herbert, Y.

Hwang, Y. Zheng, P. Asbeck, Y. Taur, M. V. Fischetti, B. Yu, D. Wang,

Y. Yuan, C. Sachs, A. Kummel, P. Mcintyre, C. Van de Walle, and J.

Harris, "Technology Development & Design for 22 nm InGaAslinPchannel

MOSFETs," IEEE Conference on Indium Phosphide and Related

Materials, Versailles, France, May 25-29, 2008.

U. Singisetti, M. A. Wistey, G. J. Burek, E. Arkun, A. K. Baraskar, Y.

Sun, E. W. Diewra, B. 1. Thibeault, A. C. Gossard, C. 1. Palmstrom, and

M. J. W. Rodwell, "lnGaAs channel MOSFET with self-aligned

source/drain MBE regrowth technology," Phys. Stat. Sol. (C), vol. 6, no. 6,

pp. 1394-1398, June 2009.

G. 1. Burek, M. A. Wistey, U. Singisetti, A. Nelson, B. J. Thibeault, S. R.

Bank, M. J. W. Rodwell, and A. C. Gossard, "Height-selective etching for

regrowth of self-aligned contacts using MBE," J. Cryst. Growth, vol. 311,

no. 7, pp. 1984-1987, March 2009.

Nidhi, S. Dasgupta, D. F. Brown, S. Keller, J. S. Speck, and U. K. Mishra,

"N-polar GaN-based highly scaled self-aligned MISHEMTs with state-ofthe-

artJr 'Le product of 16.8 GHz-/lm," in IEDM Tech. Dig., 2009, pp.



  • There are currently no refbacks.

Copyright © IJETT, International Journal on Emerging Trends in Technology